Vishay 293D336X96R3A2TE3固體SMD鉭電容
發布時間:2026-01-16 08:43:19 瀏覽:101
Vishay 293D系列是一款高可靠性的固態鉭貼片電容,專為工業、通信和通用電子設備設計。與其他電容器相比,Vishay威世公司的這款 293D336X96R3A2TE3 鉭質固態電容器具有更高的單位體積電容值,并且尺寸更小。它能夠承受 6.3V直流電壓。這款固態電容器的最大工作溫度為 125°C。其漏電流為 2μA。其電容值為 33μF。容差為 10%。該產品長 3.2mm、高 1.6mm、深 1.6mm。

Vishay 293D系列鍵參數
容值范圍:0.10 μF ~ 1000 μF
額定電壓:4 V ~ 75 V(對應 85 °C)
工作溫度:-55 °C ~ +125 °C(>85 °C 需自動降額)
容差:±5 % / ±10 % / ±20 % 可選
ESR:最低 0.2 Ω(100 kHz,視容值/電壓/殼號而定)
紋波電流:最高 0.64 A (100 kHz)
典型應用場景
工業控制:PLC I/O 模塊、伺服驅動器電源去耦
通信基礎設施:5G 小基站、RRU 功放板、交換芯片旁路
汽車電子:ECU 電源、BMS 采樣板、車載信息娛樂系統
通用電子:高端儀器儀表、FPGA/CPU 負載點轉換器
型號

| 293D336X0004A2TE3 | 293D336X9010D2TE3 | 293D336X0035E2DE3 |
| 293D336X0004A2WE3 | 293D336X9010D2WE3 | 293D336X0035E2TE3 |
| 293D336X0004B2TE3 | 293D336X9010D8T | 293D336X0035E8T |
| 293D336X0004B2WE3 | 293D336X9016B2DE3 | 293D336X06R3A2TE3 |
| 293D336X0004C2TE3 | 293D336X9016B2TE3 | 293D336X06R3A2WE3 |
| 293D336X0004C2WE3 | 293D336X9016B2WE3 | 293D336X06R3A8T |
| 293D336X0004D2TE3 | 293D336X9016B8T | 293D336X06R3B2TE3 |
| 293D336X0004D2WE3 | 293D336X9016C2TE3 | 293D336X06R3B2WE3 |
| 293D336X0010B2TE3 | 293D336X9016C2WE3 | 293D336X06R3B8T |
| 293D336X0010B2WE3 | 293D336X9016C8T | 293D336X06R3C2TE3 |
| 293D336X0010B8T | 293D336X9016D2TE3 | 293D336X06R3C2WE3 |
| 293D336X0010C2TE3 | 293D336X9016D2WE3 | 293D336X06R3C8T |
| 293D336X0010C2WE3 | 293D336X9016D8T | 293D336X5004B2TE3 |
| 293D336X0010C8T | 293D336X9020C2TE3 | 293D336X5010B2TE3 |
| 293D336X0010D2TE3 | 293D336X9020C2WE3 | 293D336X5010C2TE3 |
| 293D336X0010D2WE3 | 293D336X9020C8T | 293D336X5010C2WE3 |
| 293D336X0010D8T | 293D336X9020C8W | 293D336X5010D2TE3 |
| 293D336X0016B2TE3 | 293D336X9020D2TE3 | 293D336X5016D2TE3 |
| 293D336X0016B8T | 293D336X9020D2WE3 | 293D336X5016D2WE3 |
| 293D336X0016C2TE3 | 293D336X9020D8T | 293D336X5020D2TE3 |
| 293D336X0016C2WE3 | 293D336X9025D2TE3 | 293D336X9004A2TE3 |
| 293D336X0016C8T | 293D336X9025D2WE3 | 293D336X9004A2WE3 |
| 293D336X0016D2TE3 | 293D336X9025D8T | 293D336X9004B2TE3 |
| 293D336X0016D2WE3 | 293D336X9025E2DE3 | 293D336X9004B2WE3 |
| 293D336X0016D8T | 293D336X9025E2RE3 | 293D336X9004C2TE3 |
| 293D336X0016D8W | 293D336X9025E2TE3 | 293D336X9004C2WE3 |
| 293D336X0020C2TE3 | 293D336X9025E2WE3 | 293D336X9004D2TE3 |
| 293D336X0020C2WE3 | 293D336X9025E8T | 293D336X9004D2WE3 |
| 293D336X0020D2TE3 | 293D336X9035E2TE3 | 293D336X9010B2TE3 |
| 293D336X0020D2WE3 | 293D336X96R3A2DE3 | 293D336X9010B2WE3 |
| 293D336X0020D8T | 293D336X96R3A2TE3 | 293D336X9010B8T |
| 293D336X0025D2TE3 | 293D336X96R3A2WE3 | 293D336X9010B8W |
| 293D336X0025D2WE3 | 293D336X96R3A8T | 293D336X9010C2TE3 |
| 293D336X0025D8T | 293D336X96R3B2TE3 | 293D336X9010C2WE3 |
| 293D336X0025E2TE3 | 293D336X96R3B2WE3 | 293D336X9010C8T |
| 293D336X0025E2WE3 | 293D336X96R3B8T | |
| 293D336X0025E8T | 293D336X96R3C2TE3 | |
| 293D336X0035D2TE3 | 293D336X96R3C2WE3 | |
| 293D336X0035D8T | 293D336X96R3C8T |
推薦資訊
Linear Systems的3N170和3N171是單N溝道增強型MOSFET,適用于快速切換和低漏源電阻應用。它們具有低電阻(r_ds(on) ≤ 200Ω)、快速開關時間(t_d(on) ≤ 3.0ns),并可在-55至+135°C的結溫下工作。這些器件的連續功率耗散為300mW,最大電流為30mA,最大電壓為±35V(漏到柵和柵到源)和25V(漏到源)。
Microsemi的1N821至1N829A系列是一組高精度的6.2及6.55伏溫度補償齊納參考二極管,具備出色的溫度穩定性(0.005%/°C)和多種電壓選項(6.2V和6.55V),適用于廣泛的溫度范圍(-65°C至+175°C)。這些二極管提供±2%和±5%的電壓公差,以及靈活的封裝選項,包括DO-35和DO-204AH,使其成為電源、信號處理和測試設備等應用的理想選擇。
在線留言