Solitron Devices SMF460 650V N溝道功率MOSFET
發布時間:2024-12-30 08:51:50 瀏覽:2741

Solitron Devices SMF460這款MOSFET適用于需要高電壓和高電流的應用,如電源轉換器、電機驅動器和高功率開關電路。
關鍵特性:
連續漏極電流 (ID):10A
導通電阻 (RDS(on)):300mΩ
快速恢復二極管:內置
雪崩額定:能夠承受高能量脈沖
封裝:TO-254 密封封裝
背面隔離:提供額外的絕緣
篩選:JANTX, JANTXV 篩選可用
絕對最大額定值(TC = 25°C,除非另有說明):
漏源電壓 (VDSmax):650V
柵源電壓 (VGSM):±30V(瞬態)
柵源電壓 (VGSS):±20V(連續)
連續漏極電流 (ID25):10A
脈沖漏極電流 (ID(PULSE)):40A(脈沖寬度Tp受TJmax限制)
功率耗散 (PD):116W
結溫范圍,工作/存儲 (TJ/TSTG):-55°C至150°C
電氣規格(TJ = 25°C,除非另有說明):
體二極管正向電壓 (VSD):1.4V(當IS = 10A, VGS = 0V)
漏源擊穿電壓 (V(BR)DSS):650V
柵閾值電壓 (VGS(th)):3至5V
關態漏極電流 (IDSS):10μA(在VDS = 650V, VGS = 0V, T = 25°C)
柵源漏電流 (IGSS):±100nA(在VGS = ±20V, VDS = 0V)
漏源導通電阻 (RDS(on)):260至300mΩ(在VGS = 10V, ID = 6A, TJ = 25°C)
跨導 (Gfs):6.5S(在VDS = 10V, ID = 6A, TJ = 25°C)
總柵電荷 (Qg(on), Qgs, Qgd):17, 4.7, 6.1nC(在VGS = 10V, VDS = 325V, ID = 6A)
開關時間 (td(on), tr, td(off), tf):23, 24, 47, 15ns(在VDD = 325V, ID = 6A, RG = 4.3Ω)
熱阻 (RthJC):1.08°C/W
更多Solitron Devices SiC MOSFET相關產品信息可咨詢立維創展。
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